Zhu, L, Lockrey, M, Phillips, MR & Cuong, T-T 2018, 'Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging', PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 215, no. 19.View/Download from: Publisher's site
Zhu, L, Khachadorian, S, Hoffmann, A, Phillips, MR & Ton-That, C 2017, 'Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires', Materials Science in Semiconductor Processing, vol. 69, pp. 57-61.View/Download from: Publisher's site
© 2016 Elsevier Ltd.ZnO nanowires with various concentrations of nitrogen molecules have been fabricated by remote plasma annealing. X-ray absorption near-edge spectroscopy (XANES) reveals that nitrogen exists mainly in two chemical states: atomic nitrogen substituting oxygen (NO) and molecular nitrogen (N2) weakly bound to the ZnO lattice; the latter state increases substantially with prolonged plasma time. Cathodoluminescence microanalysis of individual nanowires reveals a broad emission band at 3.24eV at 10K, attributable to the recombination of a shallow donor and a N2 acceptor state. The Raman modes at 547 and 580cm-1 from the N-doped nanowires are found to rise in proportion to the N2 concentration, indicating they are related to N2 molecules or defects caused by the incorporation of N2 in the nanowires.
Zhu, L, Lem, LLC, Nguyen, TP, Fair, K, Ali, S, Ford, MJ, Phillips, MR & Ton-That, C 2017, 'Indirect excitons in hydrogen-doped ZnO', Journal of Physics D: Applied Physics, vol. 50, no. 11.View/Download from: Publisher's site
© 2017 IOP Publishing Ltd. We present a correlative experimental and theoretical study of bound excitons in hydrogen-doped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface region, using a combination of surface-sensitive characterisation techniques and density functional theory calculations. A metastable sub-surface emission at 3.31 eV found in H-doped ZnO is attributed to the radiative recombination of indirect excitons localised at basal plane stacking faults (BSFs) where the excitonic transition involves electrons bound to bond-centre hydrogen donors in the potential well of the BSF. Additionally, our work shows the electrical transport of ZnO Schottky junctions is dominated by electrons confined at BSFs in the near-surface region.
Khachadorian, S, Gillen, R, Ton-That, C, Zhu, L, Maultzsch, J, Phillips, MR & Hoffmann, A 2016, 'Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires', PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, vol. 10, no. 4, pp. 334-338.View/Download from: Publisher's site
Rajan, A, Rogers, DJ, Ton-That, C, Zhu, L, Phillips, MR, Sundaram, S, Gautier, S, Moudakir, T, El-Gmili, Y, Ougazzaden, A, Sandana, VE, Teherani, FH, Bove, P, Prior, KA, Djebbour, Z, McClintock, R & Razeghi, M 2016, 'Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer', JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 49, no. 31.View/Download from: Publisher's site
Ton-That, C, Zhu, L, Lockrey, MN, Phillips, MR, Cowie, BCC, Tadich, A, Thomsen, L, Khachadorian, S, Schlichting, S, Jankowski, N & Hoffmann, A 2015, 'Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing', PHYSICAL REVIEW B, vol. 92, no. 2.View/Download from: Publisher's site
Aligned nitrogen-doped ZnO nanowires were grown by chemical vapour deposition using Au catalyst. N incorporation was achieved through the introduction of N2O gas as a dopant source and con?rmed by Raman spectroscopy, which reveals additional N-related modes at 275, 580 and 642 cm1 . The nanowires have a hexagonal faceted shape and are predominantly grown along the  direction. The nanowire morphology is unaffected by N incorporation. The luminescence peak at 3.24 eV was monitored as a function of N2O content. Intensity analysis of this band reveals that it can be partly attributed to donoracceptor pair (DAP) emission originating from the N doping