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Katie McBean

Biography

Katie began working at UTS in 2000, after completing her Honours degree in Tasmania and a year working for TEMCO, a manganese alloy plant. As part of her undergraduate studies, she completed a double major in chemistry but also studied biomedical science and physics. This culminated in an honours research project that investigated the roles strontium and magnesium on the growth of abalone shells. Due to the limited nature of the biological samples as part of this study, Katie had to rely on a number of non-destructive analysis techniques such as SEM, EPMA, XPS and Raman Spectroscopy rather than wet chemistry. This resulted in a fascination with the capability of these techniques to be applied to a number of samples which is exactly what the MAU does. After some research into rare-earth doped ZnO nanoparticles and other semiconductors, Katie is now concentrating on the management of the labs and delving into the world of transmission electron microscopy.

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Research Laboratory Manager, Technical Services Research
Research Laboratory Manager, Centre of Expertise Microstructural Analysis
B.App.Sc. (Hons)(Tas)
 
Phone
+61 2 9514 7817

Research Interests

  • Zinc oxide nanostructures
  • Rare earth doping of semiconductors
  • Abalone shell structure and growth
  • Microanalysis
  • Electron microscopy

Primary staff contact for the following instruments:

  • Zeiss Supra 55VP SEM
  • Zeiss EVO LS15 SEM
  • FEI Tecnai T20 TEM

Assist in the laboratory classes for 68320 Scanning Probe and Electron Microscopy

Conferences

McBean, K.E., Phillips, M. & Drouin, D. 2006, 'Effects of lithium doping and post-processing on the cathodoluminescence of zinc oxide nanoparticles', Proceedings of Microscopy & Microanalysis 12, Suppl. 2, 2006, Microscopy & Microanalysis, Cambridge University Press, Chicago, USA, pp. 1510-1511.
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Zinc oxide (ZnO) is a wide band-gap (3.37 eV) semiconductor with a large exciton binding energy of 60 meV. Because of these properties, ZnO is a good candidate for a wide range of applications, including varistors, phosphors as well as a large range of optical devices. Although the optical properties of ZnO have been extensively studied, there is still intensive debate as to the origin of a number of the luminescence centers observed.
Mokhapati, S., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M. 2006, 'Integration of quantum dots devices by selective area epitaxy', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, International Conference on Nanoscience & Nanotechnology, IEEE, Brisbane, Australia, pp. 442-445.
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The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot lase integrated with a quantum well waveguide.
Mokkapati, S., Lever, P., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M.R. 2005, 'Selective area epitaxy of InGaAs quantum dots for optoelectronic device integration', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 273-275.
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We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm. © 2005 IEEE.
Mokkapati, S., Wong-Leung, J., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M.R. 2005, 'Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration', 2005 5th IEEE Conference on Nanotechnology, pp. 593-595.
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We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides. ©2005 IEEE.
Phillips, M. & McBean, K.E. 2004, 'In-situ evaluation of post growth treatments on the cathodomluminescence properties of fluorescent nanoparticles in the Environmental Scanning Electron Microscope', Proceedings Microscopy and Microanalysis 2004, Microscopy & Microanalysis, Cambridge University Press, Savannah, USA, pp. 1064-1065.
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Journal articles

Hill, M.R., Bastow, T.J., Bourgeois, L., Turner, D.R., Seeber, A., McBean, K.E. & Whitfield, H.J. 2012, 'A simple route to full structural analysis of biophosphates and their application to materials discovery', Dalton Transactions, vol. 41, no. 18, pp. 5497-5501.
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An integrated suite of synthesis and characterisation techniques that includes synchrotron-based single crystal, powder X-ray diffraction, nuclear magnetic resonance and electron diffraction have been employed to uncover two new distinct structures in the CaxBa2-xP2O7 polymorphic phosphate system. These materials have particular relevance for their application as both biomaterials and phosphors. Calcium barium pyrophosphate, CaBaP2O7, was shown by a combination of spectroscopic and diffraction techniques to have two polymorphs distinct in structure from all of the five previously reported polymorphs of Ca, Sr and Ba pyrophosphate. A high temperature polymorph HT-CaBaP2O7 prepared at 1200 °C is orthorhombic, of space group P212121 with a = 13.0494 Å, b = 8.9677 Å, c = 5.5444 Å. A low temperature polymorph LT-CaBaP2O7, prepared below 1000 °C, is monoclinic with space group P21/c and dimensions a = 12.065 Å, b = 10.582 Å, c = 9.515 Å, = 94.609°.
Mokkapati, S., Wong-Leung, J., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M. 2008, 'Tuning the bandgap of InAs quantum dots by selective-area MOCVD', Journal Of Physics D-Applied Physics, vol. 41, no. 8, pp. 0-0.
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In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A sing
Yang, J., Li, S.S., Li, Z.W., McBean, K.E. & Phillips, M. 2008, 'Origin of excitonic emission suppression in an individual ZnO nanobelt', Journal Of Physical Chemistry C, vol. 112, no. 27, pp. 10095-10099.
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The near band edge emissions of an individual ZnO nanobelt were investigated by cathodoluminescence spectroscopy, which has unique advantages in higher spatial resolution, orientation, and environmental independence over the conventional photoluminescenc
Choi, M., McBean, K.E., McDonagh, A.M., Maynard, P.J., Lennard, C.J. & Roux, C.P. 2008, 'An evaluation of nanostructured zinc oxide as a fluorescent powder for fingerprint detection', Journal of Materials Science, vol. 43, no. 2, pp. 732-737.
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Zinc oxide is evaluated as a fluorescent powder for the detection of fingermarks on non-porous surfaces. Pure and lithium-doped nanostructured zinc oxide powders were characterized using scanning electron microscopy, X-ray diffraction, and fluorescence spectroscopy. The zinc oxide powders were applied to fresh and aged fingermarks deposited on non-porous surfaces such as glass, polyethylene and aluminium foil. Zinc oxide was found to produce clear fluorescent impressions of the latent fingermarks when illuminated with long-wave UV light
Motlan, M., Zhu, G., Gh, D., McBean, K.E., Phillips, M. & Goldys, E.M. 2007, 'Annealing Of ZnS Nanocrystals Grown By Colloidal Synthesis', Optical Materials, vol. 29, no. 12, pp. 1579-1583.
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ZnS nanocrystals (NCs) capped with tetramethylammonium (TMAH) were synthesized from ZnCl2 . 2H(2)O and thiourea using a wet chemical process. Further treatments of the nanocrystals such as aging, and annealing have been conducted to examine the stability
Liu, J., McBean, K.E., Harris, N. & Cortie, M.B. 2007, 'Optical Properties Of Suspensions Of Gold Half-shells', Materials Science And Engineering B: Solid State Materials For Advanced Technology, vol. 140, no. 3, pp. 195-198.
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Suspensions of mesoscale gold half-shells of controlled size were produced by microsphere-templated vapour deposition and their optical proper-ties were studied. The transmission spectra of the particles exhibited an extinction peak that could be tuned f
Cortie, M.B., McBean, K.E. & Elcombe, M. 2006, 'Fracture Mechanics Of Mollusc Shells', Physica B: Condensed Matter, vol. 385, no. 1, pp. 545-547.
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The shape and structure of the shells of molluscs has attracted considerable attention. One aspect of interest is the comparatively high resistance to fracture of these shells. It is known that they are composite structures of aragonite, other calcereous
McBean, K.E., Phillips, M. & Goldys, E.M. 2006, 'Synthesis and characterization of doped and undoped ZnO nanostructures', Microscopy And Microanalysis, vol. 12, no. 4, pp. 327-330.
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Zinc oxide (ZnO) nanoparticles have been produced using precipitation methods from ethanolic solution. Rare-earth metal doping was performed, and the effect of lithium codoping on the luminescence properties of the rare-earth doped products was assessed.
Choi, M., McBean, K.E., Wuhrer, R., McDonagh, A.M., Maynard, P.J., Lennard, C.J. & Roux, C.P. 2006, 'Investigation into the binding of gold nanoparticles to fingermarks using scanning electron microscopy', Journal of Forensic identification, vol. 56, no. 1, pp. 24-32.
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For the first time, scanning electron microscopy has been used to investigate the binding of gold nanoparticles to fingermarks placed on nanoporous surfaces. The results show that gold nanoparticles, under standard MMDII conditions, bind preferentially to latent fingermark ridges on nonporous surfaces. Variation in surfactant concentration influences background development but does not affect the binding of gold nanoparticles to the ridges, while pH variation influences the binding to ridges but leaves valley regions unaffected.
Mokkapati, S., Lever, P., Tan, H.H., Jagadish, C., McBean, K.E. & Phillips, M. 2005, 'Controlling the properties of InGaAs quantum dots by selective-area epitaxy', Applied Physics Letters, vol. 86, no. 11, pp. 1-3.
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Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of